Influence of temperature ramp on the materials properties of GaSb grown on ZnTe using molecular beam epitaxy

نویسندگان

  • Jin Fan
  • Lu Ouyang
  • Xinyu Liu
  • Ding Ding
  • Jacek K. Furdyna
  • David J. Smith
  • Yong-Hang Zhang
چکیده

Articles you may be interested in Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy ZnO/GaN heterointerfaces and ZnO films grown by plasma-assisted molecular beam epitaxy on (0001) GaN/Al 2 O 3 Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy Al 1−x In x As 1−y Sb y / GaSb heterojunctions and multilayers grown by molecular beam epitaxy for effective-mass superlattices

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Growth and material properties of ZnTe on GaAs, InP, InAs and GaSb (0 0 1) substrates for electronic and optoelectronic device applications

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تاریخ انتشار 2015